Pulse profiling for AlGaN/GaN HEMTs large signal characterizations

Proceedings of the 38th European Microwave Conference, EuMC 2008

Volumn , Issue , 2008, Pages 757-760

  Faraj, Jad ^a   De Groote, Fabien ^b   Teyssier, Jean Pierre ^a   Verspecht, Jan ^c   Quéré, Raymond ^a   Aubry, Raphaël ^d  

^a UNIVERSITY OF LIMOGES   (France)

^b Verspecht Teyssier DeGroote SAS   (France)

^c Jan Verspecht bvba   (Belgium)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS;

ALGAN/GAN HEMTS; HIGH POWER; LARGE SIGNAL CHARACTERIZATION; LOAD PULL; MEASUREMENTS OF; MULTIHARMONIC; TIME-DOMAIN WAVEFORMS; TRANSISTOR CHARACTERISTICS;

GALLIUM NITRIDE;

EID: 62349129213     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2008.4751563     Document Type: Conference Paper

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