An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR

IEEE Transactions on Microwave Theory and Techniques

Volumn 55, Issue 12, 2007, Pages 2660-2669

  Jardel, Olivier ^b   De Groote, Fabien ^b   Reveyrand, Tibault ^b   Jacquet, Jean Claude ^c   Charbonniaud, Christophe ^d   Teyssier, Jean Pierre ^b   Floriot, Didier ^c   Quéré, Raymond ^a,b  

^a IEEE   (France)

^b UNIVERSITY OF LIMOGES   (France)

^c ALCATEL THALES III V LAB   (France)

^d ESTER Technopole   (France)

Author keywords

AlGaN GaN HEMTs modeling; Drain lag; Gate lag; Large signal network analyzer; Trapping effects

Indexed keywords

DRAIN LAG; GATE LAG; LARGE-SIGNAL NETWORK ANALYZER; TRAPPING EFFECTS;

COMPUTER SIMULATION; MATHEMATICAL MODELS; NONLINEAR ANALYSIS; SIGNAL ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36949019955     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2007.907141     Document Type: Conference Paper

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