Preparation, characterization and properties of N-rich Zr-N thin film with Th 3 P 4 structure

Applied Surface Science

Volumn 255, Issue 12, 2009, Pages 6355-6358

  Sui, Y R ^a,b   Xu, Y ^a   Yao, B ^a   Xiao, L ^b   Liu, B ^a  

^a JILIN UNIVERSITY   (China)

^b JILIN NORMAL UNIVERSITY   (China)

Author keywords

c Zr 3 N 4 film; Characterization and properties; Crystal structure; rf magnetron sputtering

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; FILM PREPARATION; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; PHOSPHORUS COMPOUNDS; SUBSTRATES; THIN FILMS; THORIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

GLASS SUBSTRATES; HALL MEASUREMENTS; MECHANISM OF FORMATION; P TYPE SEMICONDUCTOR; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SPUTTERING GAS; ZRN FILMS;

NITROGEN COMPOUNDS;

EID: 62349124412     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.015     Document Type: Article

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