Dry etching of high-k dielectric thin films in HBr/Ar plasma

Journal of the Korean Physical Society

Volumn 54, Issue 2 PART 1, 2009, Pages 934-938

  Kim, Dong Pyo ^a   Kim, Gwan Ha ^a   Woo, Jong Chang ^a   Kim, Hwan Jun ^a   Kim, Chang Il ^a   Lee, Cheol In ^b   Lee, Sewung Kwon ^c   Jung, Tae Woo ^c   Moon, Seung Chan ^c   Park, Sang Wook ^c  

^a Chung Ang University   (South Korea)

^b Ansan University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Al2O3; HBr Ar; HfO2; SEM; XPS

Indexed keywords

EID: 62149096809     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.934     Document Type: Conference Paper

References (20)

1. T. Hori, Gate Dielectrics and MOS ULSI (Springer, New York 1997), p. 169.
2. S. Wolf, Silicon Processing for the VLSI Era Vol. 4 - Deep-Submicron Process Technology (Lattice Press, Sunset Beach, 2002).
3. A. L. Dernan, M. Erouel, D. Lallemand, M. Phaner-Goutorbe, P. Lang and J. Tardy, J. Non-crystalline Solids 354, 1598 (2008).
4. J. G. Kang, D. Y. Kim and K. J. Chang, J. Korean Phys. Soc. 50, 552 (2007).
5. T. G. Kim, B. H. Kim, I. Y. Kang, Y. C. Chung, J. H. Ahn, S. Y. Lee, I. S. Park, C. Y. Kim and N. E. Lee, J. Korean Phys. Soc. 49, 721 (2006).
6. A. Efremov, N. K. Min, K. H. Kwon, S. J. Yun, H. W. Lee and M. P. Hong, J. Korean Phys. Soc. 53, 193 (2008).
7. M. H. Shin, S. W. Na, N. E. Lee, T. H. O, J. Y. Kim, T. H. Lee and J. H. Ahn, Jap. J. Appl. Phys. 44, 5811 (2005).
8. J. H. Ko, D. Y. Kim, M. S. Park, N. E. Lee, S. S. Lee, J. H. Ahn and H. S. Mok., J. Vac. Sci. Technol. A 25, 990 (2007).
9. S. K. Yang, H. H. Kim, B. H. O, S. G. Lee, E. H. Lee, S. G. Park, S. P. Chang, J. G. Lee and H. Y. Song, J. Korean Phys. Soc. 51, S198 (2007).
10. H. Struyf, Q. T. Le, T. Dupont, W. Boullart and S. Vanhaelemeersch, Proc. of 26th International Symposium on Dry Process (Tokyo, 2004), p. 23.
11. A. P. Mahorowala, K. J. Chen, R. Sooriyakumaran, A. Clancy, D. Murthy and S. Rasgon, Proc. SPIE 5753 (San Jose, 2005), p. 380.
12. M. C. Kim, D. Shamiryan, Y. J. Jung, W. Boullart, C. J. Kang and H. K. Cho, J. Vac. Sci. Technol. B 24, 2645 (2006).
13. K. Y. Lee, W. C. Lee, M. L. Huang, C. H. Chang, Y. J. Lee, Y. K. Chiu, T. B. Wu, M. Hong and R. Kwo, J. Crystal Growth 301-302, 378 (2007).
14. D. H. Lee, Y. K. Oh and N. H. Kim, Proc. of the 5th International Conference on Microelectronics and Interfaces (Santa Clara, 2004), p. 177.
15. D. R. Ride, Handbook of Chemistry and Physics (CRC Press, New York, 2004-2005).
16. G. H Kim, K. T. Kim, D. P. Kim, C. I. Kim, K. H Kwon and C. S Park, J. Korean Phys. Soc. 45, 724 (2004).
17. 2) Composition and Soichiometry (Evans Analytical Group, Sunnyvale, 2007)
18. C. W. Chung, Y. H. Byun and H. I. Kim, Microelectronic Eng. 63, 353 (2002).
19. B. Vincent Crist, Handbooks of Monochromatic XPS Spectra, Vol. 2 - Commercially Pure Oxides (XPS International LLC, Mountain View, 2005), p. 45.
20. I. Olefjord, H. J. Mathieu and P. Marcus, Surf. Interface Anal. 15, 681 (1990).