Ultrasmooth silver thin films deposited with a germanium nucleation layer

Nano Letters

Volumn 9, Issue 1, 2009, Pages 178-182

  Logeeswaran, V J ^a,b,c,e,f,g   Kobayashi, Nobuhiko P ^a,b,c,e,f,g   Islam, M Saif ^a,b,c,e,f,g   Wu, Wei ^a,b,c,e,f,g   Chaturvedi, Pratik ^{a,b,c,d,e,f,g}   Fang, Nicholas X ^{a,b,c,d,e,f,g}   Wang, Shih Yuan ^a,b,c,e,f,g   Williams, R Stanley ^a,b,c,e,f,g  

^a University of California   (United States)

^b University of California Santa Cruz   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

^d University of Illinois at Urbana Champaign   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f NASA AMES RESEARCH CENTER   (United States)

^g UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AG FILMS; ELECTRON-BEAM; GRAIN-SIZE DISTRIBUTIONS; HEIGHT DISTRIBUTIONS; HIGH ELECTRICAL CONDUCTIVITIES; LARGE-SCALE APPLICATIONS; NUCLEATION LAYERS; ORDER OF MAGNITUDES; PLASMONIC DEVICES; ROOT MEAN SQUARES; SEED LAYERS; SI (100) SUBSTRATES; SILVER THIN FILMS; THIN LAYERS;

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRODEPOSITION; GERMANIUM; GROWTH KINETICS; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE PROPERTIES; SURFACE ROUGHNESS; THIN FILMS;

SILVER;

GERMANIUM; NANOMATERIAL; SILVER;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SILVER; SURFACE PROPERTIES;

EID: 61649122902     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8027476     Document Type: Article

References (36)

1. Ushiku, Y.; Ono, H.; Iijima, T.; Ninomiya, N.; Nishiyama, A.; Iwai, H.; Hara, H. In Technical Digest VLSI Technology Symposium, Kyoto, Japan, 1993; p 121.
2. Manepalli, R.; Stepniak, F.; Bidstrup-Allen, S. A.; Kohl, P. IEEE Trans Adv. Packag. 1999, 22, 4-8.
3. Alford, T. L.; Adams, D.; Laursen, T.; Ulrich, B. M. Appl. Phys. Lett. 1996, 68, 3251-3253.
4. Xu, Q.; Bao, J.; Capasso, F.; Whitesides, G. M. Angew. Chem., Int. Ed. 2006, 45, 3631-3635.
5. Smith, D. R.; Padilla, W. J.; Vier, D. C.; Nemat-Nasser, S. C; Schultz, S. Phys. Rev. Lett. 2000, 84, 4184-4187.
6. Shelby, R. A.; Smith, D. R.; Schultz, S. Science 2001, 292, 77-79.
7. Fang, N.; Lee, H.; Sun, C; Zhang, X. Science 2005, 308, 534-537.
8. Yen, T. J.; Padilla, W. J.; Fang, N.; Vier, D. C; Smith, D. R.; Pendry, J. B.; Basov, D. N.; Zhang, X. Science 2004, 303, 1494-1496.
9. Marechal, N.; Quesnel, E.; Pauleau, Y. J. Vacuum Sci. Technol., A 1994, 12, 707-713.
10. Kim, H. C; Theodore, N. D.; Alford, T. L. J. Appl. Phys. 2004, 95, 5180-5188.
11. Islam, M. S.; Li, Z.; Chang, S. C; Ohlberg, D. A. A.; Stewart, D. R.; Wang, S. Y.; Williams, R. S. In Proc. IEEE Conf. Nanotechnol, 5th; IEEE: Nagoya, Japan, 2005; Vol. 80, p 83.
12. Lazzari, R.; Jupille, J. Surf. Sci. 2001, 482, 823-828.
13. Dimmock, J. O. Opt. Express 2003, 11, 2397-2402.
14. Prior to exposure and e-beam evaporation using the resistor contact layout mask, the photoresist was vacuum-baked at room temperature for ̃3 h (to minimize any thermal effects on the Ag thin film) and the wafer subsequently cleaned using an oxygen-reactive-ion etching process with a power of ̃60 W for ̃10 s.
15. Neddermeyer, H. Crit. Rev. Solid State Mater. Sci. 1990, 16, 309-335.
16. Kundu, S.; Hazra, S.; Banerjee, S.; Sanyal, M. K.; Mandal, S. K.; Chaudhuri, S.; Pal, A. K. J. Phys. D: Appl. Phys. 1998, 31, L73-L77.
17. Higo, M.; Fujita, K.; Tanaka, Y.; Mitsushio, M.; Yoshidome, T. Appl. Surf. Sci. 2006, 252, 5083-5099.
18. Braun, C. Parrat32 Software for Reflectivity; HMI, Berlin, 1999.
19. The resistance of the 2 nm Ge film is >5 MΩ and the Ag film essentially forms the conduction layer. There was also no significant diffusion of Ge into the thin Ag layer as evidenced by the distinct abrupt interface in the GIXR results.
20. Gergen, B.; Nienhaus, H.; Weinberg, W. H.; McFarlanda, E. M. J. Vac. Sci. Technol., B 2000, 18, 2401-2405.
21. Wissmann, P.; Finzel, H.-U. Electrical Resistivity of Thin Metal Films; Springer-Verlag: Berlin and Heidelberg, 2007.
22. McBrayer, J. D.; Swanson, R. M.; Sigmon, T. W. J. Electrochem. Soc. 1986, 133, 1242-1246.
23. Karmous, A.; Berbezier, I.; Ronda, A. Phys. Rev. B 2006, 73, 075323.
24. Zhang, Z. Y.; Lagally, M. G. Science 1997, 276, 377-383.
25. Seebauer, E. G.; Allen, C. E. Prog. Surf. Sci. 1995, 49, 265-330.
26. Kim, H. C; Alford, T. L.; Allee, D. R. Appl. Phys. Lett. 2002, 81, 4287-4289.
27. Vossen, J. L. In Physics of Thin Films; Haas, G., Francombe, M. H., Hoffman, R. W., Eds.; Academic Press: Cleveland, OH, 1977; Vol. 9, pp 1-64.
28. Chaurasia, H. K.; Voss, W. A. G. Nature 1974, 249, 28-29.
29. Arbab, M. Thin Solid Films 2001, 381, 15-21.
30. Anders, A.; Byon, E.; Kim, D. H.; Fukuda, K.; Lim, S. H. N. Solid State Commun. 2006, 140, 225-229.
31. Allara, D. L.; Hebard, A. F.; Padden, F. J.; Nuzzo, R. G.; Falcone, D. R. J. Vac. Sci. Technol., A 1983, 7, 376-382.
32. Rossi, G.; Abbati, I.; Braicovich, L.; Lindau, I.; Spicer, W. E. Phys. Rev. B 1982, 25, 3619-3626.
33. Nakatsuji, K.; Takagi, Y.; Yamada, M.; Naitoh, Y.; Komori, F. Surf. Sci. 2005, 591, 108-116.
34. Miller, T.; Rosenwinkel, E.; Chiang, T. C. Phys. Rev. B 1984, 30, 570-577.
35. Jonas, K. L.; Von Oeynhausen, V.; Bansmann, J.; Meiwes-Broer, K. H. Appl. Phys. A: Mater. Sci. Process. 2006, 82, 131-137.
36. Basile, L.; Hong, H. W.; Czoschke, P.; Chiang, T. C. Appl. Phys. Lett. 2004, 84, 4995-4997.