High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation

Applied Surface Science

Volumn 255, Issue 10, 2009, Pages 5537-5541

  Ellman, M ^a   Rodriguez A ^a   Perez N ^a   Echeverria, M ^a   Verevkin, Y K ^b   Peng, C S ^c   Berthou, T ^d   Wang, Z ^e   Olaizola, S M ^a   Ayerdi, I ^a  

^a CEIT   (Spain)

^b INSTITUTE OF APPLIED PHYSICS   (Russian Federation)

^c TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^d SILIOS Technologies   (France)

^e CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Laser interference lithography; LIL; Photoresist; Pulsed lithography; Surface nanostructuring

Indexed keywords

ASPECT RATIO; ELECTROMAGNETIC LAUNCHERS; ELECTRON BEAM LITHOGRAPHY; HIGH POWER LASERS; MICROMETERS; PHOTORESISTS; SILICON WAFERS; THICKNESS MEASUREMENT;

HIGH THROUGHPUT; LASER FLUENCES; LASER INTERFERENCE LITHOGRAPHY; LASER INTERFERENCE LITHOGRAPHY (LIL); LOW COST FABRICATION; RESIST THICKNESS; SUBMICROMETERS; SURFACE NANOSTRUCTURING;

PULSED LASERS;

EID: 61549102494     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.201     Document Type: Article

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