Thin film growth of semiconducting Mg2Si by codeposition

Applied Physics Letters

Volumn 70, Issue 9, 1997, Pages 1086-1088

  Vantomme, André ^a   Mahan, John E ^a,b   Langouche, Guido ^a   Becker, James P ^b   Van Bael, Margriet ^a   Temst, Kristiaan ^a   Van Haesendonck, Chris ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Engineering Research Center and Hydraulics Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BACKSCATTERING; DEPOSITION; EVAPORATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE ROUGHNESS; THIN FILMS; VACUUM; X RAY DIFFRACTION;

CODEPOSITION; MAGNESIUM SILICIDE; SELF AFFINE GROWTH MODE; ULTRAHIGH VACUUM EVAPORATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031550755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118492     Document Type: Article

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