Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Ong, K K ^a   Pey, K L ^a   Lee, P S ^b   Wee, A T S ^c   Wang, X C ^d   Tung, C H ^e   Tang, L J ^e   Chong, Y F ^f  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^e INSTITUTE OF MICROELECTRONICS   (Singapore)

^f CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

LOW THERMAL BUDGET; N JUNCTIONS; P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS; PULSED LASER ANNEALING;

MOSFET DEVICES;

EID: 33748976787     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354446     Document Type: Article

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