Preparation of Highly Oriented Aluminum Nitride Thin Films on Polycrystalline Substrates by Helicon Plasma Sputtering and Annealing

Journal of the American Ceramic Society

Volumn 84, Issue 9, 2001, Pages 1917-1920

  Akiyama, Morito ^a   Xu, Chao Nan ^a   Kodama, Masaya ^a   Usui, Ichiro ^a,b   Nonaka, Kazuhiro ^a   Watanabe, Tadahiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Industrial Technology Center of Saga   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; CRYSTAL STRUCTURE; PIEZOELECTRIC MATERIALS; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; STRESSES; STRUCTURE (COMPOSITION); VACUUM;

FULL WIDTH AT HALF MAXIMUM; HELICON PLASMA SPUTTERING; X-RAY ROCKING CURVES;

THIN FILMS;

EID: 0035470702     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb00937.x     Document Type: Article

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