Fabrication and characterization of 2-inch diameter AIN single-crystal wafers cut from bulk crystals

Materials Research Society Symposium Proceedings

Volumn 955, Issue , 2006, Pages 22-27

  Bondokov, Robert T ^a   Morgan, Kenneth E ^a   Slack, Glen A ^a   Schowalter, Leo J ^a  

^a Crystal IS Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH PIT DENSITY (EPD); LAUE DIFFRACTION; X-RAY ROCKING CURVES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; TOPOGRAPHY; WAFER BONDING;

ALUMINUM COMPOUNDS;

EID: 40949107407     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

1. G. A. Slack and T.F. McNelly, J. Cryst. Growth 34, 263 (1976).
2. G. A. Slack and T.F. McNelly, J. Cryst. Growth 42, 560 (1977).
3. B.M. Epelbaum, M. Bickermann, A. Winnacker, J. Cryst. Growth 275, e479 (2005).
4. J.H. Edgar, L. Liu, B. Liu, D. Zhuang, J. Chaudhuri, M. Kuball, S. Rajasingam, J. Cryst. Growth 246, 187 (2002).
5. B. Liu, J.H. Edgar, B. Raghothamachar, M. Dudley, J.Y. Lin, H.X. Jiang, A. Sarua, M. Kuball, Materials Science and Engineering B 117, 99 (2005).
6. V. Noveski, R. Schlesser, B. Raghothamachar, M. Dudley, S. Mahajan, S. Beaudoin, Z. Sitar, J. Cryst. Growth 279, 13 (2005).
7. Z.G. Herro, D. Zhuang, R. Schlesser, R. Collazo, Z. Sitar, J. Cryst. Growth 286, 205 (2006).
8. J. C. Rojo, L. J. Schowalter, K. Morgan, D. I. Florescu, F. H. Pollak, B. Raghothamachar, and M. Dudley in Wide Bandgap Electronics, edited by T. E. Kazior, P. Parikh, C. Nguyen, E. T. Yu, (Mat. Res. Soc. Symp. Proc. 680E, San Fransisco, CA, 2001) pp. E2.1.1 -E2.1.7.
9. J.C. Rojo, G. A. Slack, K. Morgan, B. Raghothamachar, M. Dudley, L. J. Schowalter, J. Cryst. Growth 231, 317 (2001).
10. L. J. Schowalter, G. A. Slack, J. B. Whitlock, K. Morgan, S. B. Schujman, B. Raghothamachar, M. Dudley, and K. R. Evans, phys. stat. sol. (c) 0, 1997 (2003).
11. V. Lebedev, V. Cimalla, U. Kaiser, Ch. Foerster, J. Pezoldt, J. Biskupek, and O. Ambacher, J. Appl. Phys. 97, 114306 (2005).
12. N. Onojima, J. Suda, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 83, 5208 (2003).
13. L. J. Schowalter, J.M. Lopez, J.C. Rojo, K. Morgan, US Patent No. 7 037 838 B2 (02 May 2006).
14. B. Raghothamachar, M. Dudley, J.C. Rojo, K. Morgan, L.J. Schowalter, J. Cryst. Growth 250, 244 (2003).
15. R. T. Bondokov, K. E. Morgan, R. Shetty, W. Liu, G. A. Slack, M. Goorsky, and L. J. Schowalter in GaN, AlN, InN and Related Materials, edited by M. Kuball, T. H. Myers, J. M. Redwing, T. Mukai, (Mater. Res. Soc. Symp. Proc. 892, Boston, MA, 2006) pp. 0892-FF30-03.1-0892-FF-03.6.
16. D. Zhuang, J.H. Edgar, Materials Science and Engineering R 48, 1 (2005).
17. D. Zhuang, J.H. Edgar, B. Strojek, J. Chaudhuri, Z. Rek, J. Cryst. Growth 262, 89 (2004).