Characterization of bias magnetron sputtered tantalum oxide films for capacitors

Indian Journal of Pure and Applied Physics

Volumn 47, Issue 1, 2009, Pages 49-53

  Chandrasekhar, M ^a   Jagadeesh Chandra, S V ^a   Uthanna, S ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Dielectric properties; Magnetron sputtering; Structure; Tantalum oxide

Indexed keywords

EID: 60949095270     PISSN: 00195596     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Novkovski N, Atanassova E & Paskaleva A, Appl Surf Sci, 253 (2007) 4396.
2. Ono T, Kato K K, Toyota H, Fukuda Y & Jin Y, Jpn J Appl Phys, 45 (2006) 7345.
3. Ezhilvalavan S & Tseng T Y, J Maler Sci: Mater Electron, 10 (1999) 9.
4. Chaneliere C, Autran J L, Devine R A B & Bailand B, Mater Sci Eng R, 22 (1998) 269.
5. Jagadeesh Chandra S V, Ulhanna S & Mohan Rao G, Appl Surf Sci, 254 (2008) 1953.
6. Atanassova E, Aygun G, Turan G R & Babeva Tz, J Vac Sci Technol A, 24 (2006) 206.
7. Banakh O, Steimann P A & Buforn L D, Thin Solid Films, 513 (2006) 136.
8. Todorova Z, Donkov N, Ristic Z, Bundaleski N, Petrovic S & Petkov M, Plasma Process Polymer, 3 (2006) 174.
9. Wagner C D, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corp Eden Praire, Minnesota) 1978.
10. Chong J P, Opila R L, Alers G D, Steigerwald M L, Lu H C, Gurfunkel E & Ustafsson T, Solid State Technol, 42 (1998) 43.
11. Atanassova E & Spassov D, Appl Surf Sci, 135 (1998) 71.
12. Huang A P, Xu S L, Zhu M K, Wang B, Yan H & T Liu T, Appl Phys Lett, 83 (2003) 3278.
13. Lee H C & Lee J Y, J Mater Sci: Mater Electron, 8 (1997) 835.
14. Park S W, Baek Y W, Lee I Y, Park C O & Im H B, J Electron Mater, 21 (1992) 635.
15. Boyd I W & Zhang J Y, Microelectron Reliab, 40 (2000) 649.
16. Pignolet A, Mohan Rao G & Krupanidhi S B, Thin Solid Films, 258 (1995) 195.
17. Dimitrova T, Arshak K & Atanassova E. Thin Solid Films, 381 (2001) 31.
18. Chen K, Nielsen M, Soss S, Rymaszewski J E, Lu T M & Wan C T, IEEE Transactions on Components. Packaging and Manufacturing Technology - Part B, 20 (1997) 117.