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Volumn 311, Issue 4, 2009, Pages 1065-1069

MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy

Author keywords

A1. Reflectance anisotropy spectroscopy (RAS RDS); A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. GaAsP; B1. InGaAs; B3. Laser diodes

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; DIODES; GALLIUM; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORUS; PULSED LASER APPLICATIONS; QUANTUM WELL LASERS; REFLECTION; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES; WELLS;

EID: 60649101222     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.031     Document Type: Article
Times cited : (13)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.