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Volumn 311, Issue 4, 2009, Pages 1065-1069
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MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy
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Author keywords
A1. Reflectance anisotropy spectroscopy (RAS RDS); A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. GaAsP; B1. InGaAs; B3. Laser diodes
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Indexed keywords
ANISOTROPY;
CRYSTAL GROWTH;
DIODES;
GALLIUM;
LASERS;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOSPHORUS;
PULSED LASER APPLICATIONS;
QUANTUM WELL LASERS;
REFLECTION;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM WIRES;
WELLS;
A1. REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS/RDS);
A3. METALORGANIC VAPOUR PHASE EPITAXY;
A3. QUANTUM WELLS;
B1. GAASP;
B1. INGAAS;
B3. LASER DIODES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 60649101222
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.12.031 Document Type: Article |
Times cited : (13)
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References (17)
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