AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 23-27

  Zorn, M ^a   Trepk, T ^b   Schenk, T ^b   Zettler, J T ^b   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

A1. Curvature; A1. In situ monitoring; A1. Reflectance; A3. Metal organic vapour phase epitaxy; B2. Semiconducting AlGaInP

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; INDIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; OPTOELECTRONIC DEVICES;

CURVATURES; IN SITU MONITORING; LATTICE MATCHING; SEMICONDUCTING ALGAINP;

ALUMINUM COMPOUNDS;

EID: 33846460046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.212     Document Type: Article

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