A comprehensive study on schottky barrier nanowire transistors (SB-NWTs): Principle, physical limits and parameter fluctuations

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 157-160

  Zhang, Liangliang ^a   Kang, Zhaoyi ^a   Wang, Runsheng ^a   Huang, Ru ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIAMETERS; COMPREHENSIVE STUDIES; CURRENT DRIVABILITY; GATE CONTROLS; NANO-WIRE TRANSISTORS; ON-OFF RATIOS; OR CHANNELS; P TYPES; PARAMETER FLUCTUATIONS; PHYSICAL LIMITS; PROCESS VARIATIONS; RF PERFORMANCE; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SILICON NANOWIRE TRANSISTORS; WORKING PRINCIPLES;

INTEGRATED CIRCUITS; NANOWIRES; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60649086625     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734495     Document Type: Conference Paper

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