Vertical mirror fabrication combining KOH Etch and DRIE of (110) silicon

Journal of Microelectromechanical Systems

Volumn 18, Issue 1, 2009, Pages 217-227

  Lee, Daesung ^a   Yu, Kyoungsik ^b   Krishnamoorthy, Uma ^c   Solgaard, Olav ^d  

^a LG Electronics Inc   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Stanford University   (United States)

Author keywords

(110) silicon; Deep reactive ion etching (DRIE); Potassium hydroxide (KOH); Silicon masking layer; Silicon optical bench (SOB); Vertical mirror

Indexed keywords

ACTUATORS; ASPECT RATIO; ETCHING; FABRICATION; IONS; MIRRORS; NONMETALS; POTASSIUM HYDROXIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

(110) SILICON; DEEP REACTIVE ION ETCHING (DRIE); POTASSIUM HYDROXIDE (KOH); SILICON MASKING LAYER; SILICON OPTICAL BENCH (SOB); VERTICAL MIRROR;

REACTIVE ION ETCHING;

EID: 60449087045     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2008.2009840     Document Type: Article

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