Random threshold voltage variability induced by gate-edge fluctuations in nanoscale metal-oxide-semiconductor field-effect transistors

Applied Physics Express

Volumn 2, Issue 2, 2009, Pages

  Putra, Arifin Tamsir ^a   Akio, Nishida ^b   Kamohara, Shiro ^b   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; IMAGE PROCESSING; ION BEAMS; LIGHT WATER REACTORS; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SMELTING; THRESHOLD VOLTAGE; TRANSISTORS;

AUTO-REGRESSIVE MODELS; EDGE FLUCTUATIONS; EDGE SHAPES; EMPIRICAL MODELS; INTUITIVE UNDERSTANDING; KEY PARAMETERS; LINE-WIDTH ROUGHNESS; MEASURED DATUM; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NANO-SCALE METALS; RANDOM THRESHOLDS; RAPID METHODS; SCANNING ELECTRON MICROSCOPES;

FIELD EFFECT TRANSISTORS;

EID: 60349109873     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.024501     Document Type: Article

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