A kinetic model of silicon carbide oxidation based on the interfacial silicon and carbon emission phenomenon

Applied Physics Express

Volumn 2, Issue 2, 2009, Pages

  Hijikata, Yasuto ^a   Yaguchi, Hiroyuki ^a   Yoshida, Sadafumi ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; GROWTH (MATERIALS); KINETIC THEORY; REACTION RATES; SILICON CARBIDE;

C EMISSIONS; CARBON EMISSIONS; CURVE FITS; INTERFACIAL REACTIONS; KINETIC MODELS; OXIDATION MECHANISMS; OXIDE GROWTHS; OXIDE THICKNESS; PARAMETER VALUES; THERMAL OXIDATIONS;

OXIDATION;

EID: 60349083681     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.021203     Document Type: Article

References (18)

1. S. Yoshida: in Electric Refractory Materials, ed. Y. Kumashiro (Marcel Dekker, New York, 2000) p. 437.
2. V. V. Afanas'ev et al.: Phys. Status Solidi A 162 (1997) 321.
3. K. Kakubari et al: Mater. Sci. Forum 527-529 (2006) 1031.
4. T. Yamamoto et al.: Jpn. J. Appl. Phys. 46 (2007) L770.
5. T. Yamamoto et al.: Mater. Sci. Forum 600-603 (2009) 667.
6. T. Yamamoto et al.: Jpn. J. Appl. Phys. 47 (2008) 7803.
7. B. E. Deal and A. S. Grove: J. Appl. Phys. 36 (1965) 3770.
8. H. Z. Massoud et al.: J. Electrochem. Soc. 132 (1985) 2685.
9. H. Kageshima et al.: Jpn. J. Appl. Phys. 38 (1999) L971.
10. H. Kageshima et al.: Microelectron. Eng. 59 (2001) 301.
11. M. Uematsu et al.: Jpn. J. Appl. Phys. 39 (2000) L699.
12. M. Uematsu et al.: J. Appl. Phys. 89 (2001) 1948.
13. Y. Hijikata et al.: Mater. Sci. Forum 600-603 (2009) 663.
14. E. A. Ray et al.: J. Appl. Phys. 103 (2008) 023522.
15. S. M. Sze: Semiconductor Devices Physics and Technology (Wiley, New York, 2002) 2nd ed., Chap. 13, p. 457.
16. W. Jügling et al.: IEEE Trans. Electron Devices 32 (1985) 156.
17. Y. Song et al.: J. Appl. Phys. 95 (2004) 4953.
18. L. Pauling: The Nature of the Chemical Bond and the Structure of Molecule and Crysals (Cornell University Press, Ithaca, NY, 1960) 3rd ed., p. 85.