Oxygen-partial-pressure dependence of SiC oxidation rate studied by in-situ spectroscopic ellipsometry

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 667-670

  Yamamoto, Takeshi ^a   Hijikata, Yasuto ^a   Yaguchi, Hiroyuki ^a   Yoshida, Sadafumi ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

(000 1); (0001); Deal grove model; In situ spectroscopic ellipsometry; Massoud empirical relation; Oxidation; Silicon carbide (SiC)

Indexed keywords

OXIDATION; OXYGEN; PARTIAL PRESSURE; RATE CONSTANTS; SPECTROSCOPIC ELLIPSOMETRY;

(000-1); (0001); DEAL-GROVE MODEL; EMPIRICAL RELATIONS; IN-SITU SPECTROSCOPIC ELLIPSOMETRY; MASSOUD EMPIRICAL RELATION; OXYGEN PARTIAL PRESSURE; PRESSURE DEPENDENCE; SI FACES; SILICON CARBIDE;

SILICON CARBIDE;

EID: 60349127717     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.667     Document Type: Conference Paper

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