Low frequency noise analysis in Hf O2 Si O2 gate oxide fully depleted silicon on insulator transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 402-405

  Zafari, L ^a   Jomaah, J ^a   Ghibaudo, G ^a   Faynot, O ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; HAFNIUM; HAFNIUM COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE; THERMAL NOISE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CURRENT NOISE; FULLY DEPLETED SILICON ON INSULATORS; GATE OXIDES; GATE STACKS; INTERFACIAL OXIDE LAYERS; LAYER THICKNESS; LINEAR REGIMES; LOW-FREQUENCY NOISE; METAL-OXIDE SEMICONDUCTORS; NOISE LEVELS; NOISE SOURCES; TIN METAL GATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 59949092226     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3072518     Document Type: Article

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