Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2274-2277

  Srinivasan, P ^a   Linder, B P ^b   Narayanan, V ^b   Misra, D ^a   Cartier, E ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

1 f noise; High k; Hooge's parameter; metal gates; Mobility; Phonon scattering

Indexed keywords

ACOUSTIC NOISE; ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; PHONON SCATTERING; SPECTRUM ANALYSIS;

HOOGE'S PARAMETER; METAL GATES;

SILICON COMPOUNDS;

EID: 34248682153     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.103     Document Type: Article

References (9)

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