Low temperature characterization of high-K dielectric metal gate FD-SOI NMOSFETs

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 39-44

  Zafari, L ^a   Jomaah, J ^a   Ghibaudo, G ^a   Faynot, O ^b   VanDooren, A ^c  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b CEA GRENOBLE   (France)

^c Freescale   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDES; HIGH-K DIELECTRIC; MOSFET DEVICES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DOPING; TEMPERATURE; TITANIUM NITRIDE;

DOPING DENSITIES; FULLY DEPLETED DEVICES; HFO2 DIELECTRIC; LOW TEMPERATURES; NOISE MEASUREMENTS; SHORT CHANNELS; SILICON FILMS; SOI N-MOSFETS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249093460     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728839     Document Type: Conference Paper

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