Air-stable n -channel single-crystal transistors with negligible threshold gate voltage

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Yamagishi, M ^a   Tominari, Y ^a   Uemura, T ^a   Takeya, J ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON AFFINITY; ORGANIC COMPOUNDS; RESONANT TUNNELING; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; THRESHOLD LOGIC; TRANSISTORS;

AIR STABLES; AMBIENT ATMOSPHERES; FIELD EFFECTS; FIELD-EFFECT DEVICES; HIGH MOBILITIES; INTRINSIC CONSTRAINTS; N CHANNELS; ORGANIC SEMI CONDUCTORS; ORGANIC TRANSISTORS; POLY-CRYSTAL FILMS; SEMICONDUCTOR CRYSTALS; SINGLE-CRYSTAL TRANSISTORS; SOLID DIELECTRICS; TETRACYANOQUINODIMETHANE; THRESHOLD GATE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 59849097399     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079397     Document Type: Article

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