Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8700-8706

  Nishizaki, Shogo ^a   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon thin film transistors (a Si TFTs); Catalytic chemical vapor deposition (Cat CVD); Hot wire CVD; Liquid crystal displays; Organic light emitting diode displays; Threshold voltage shift

Indexed keywords

ALUMINA; AMORPHOUS FILMS; ATOMS; CHEMICAL STABILITY; CHROMIUM; CURRENT DENSITY; DEFECTS; FILM PREPARATION; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; NITRIDES; NONMETALS; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TITANIUM; TRANSISTORS; VAPOR DEPOSITION; VAPORS; WIRE;

AMORPHOUS SILICON THIN-FILM TRANSISTORS (A-SI TFTS); CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); HOT-WIRE CVD; ORGANIC LIGHT-EMITTING DIODE DISPLAYS; THRESHOLD VOLTAGE SHIFT;

AMORPHOUS SILICON;

EID: 59349114970     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8700     Document Type: Article

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