Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8874-8879

  Fukushima, Tadahiro ^a   Yoshimura, Takeshi ^a   Masuko, Keiichiro ^a   Maeda, Kazuhiro ^a   Ashida, Atsushi ^a   Fujimura, Norifumi ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Ferroelectric gate; Nonvolatile memory; Oxide semiconductor; Polar semiconductor; Thin film transistor; YMnO3; ZnO

Indexed keywords

ELECTRIC CONDUCTIVITY; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MESFET DEVICES; PLATINUM; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC OXIDE;

FERROELECTRIC GATE; NONVOLATILE MEMORY; OXIDE SEMICONDUCTOR; POLAR SEMICONDUCTOR; THIN-FILM TRANSISTOR; YMNO3; ZNO;

TRANSISTORS;

EID: 59349099196     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8874     Document Type: Article

References (27)

1. J. L. Moll and Y. Tarui: IEEE Trans. Electron Devices 10 (1963) 338.
2. H. Ishiwara: Jpn. J. Appl. Phys. 32 (1993) 442.
3. K. Sugibuchi, Y. Kurogi, and N. Endo: J. Appl. Phys. 46 (1975) 2877.
4. S. Sakai, R. Ilangovan, and M. Takahashi: Jpn. J. Appl. Phys. 43 (2004) 7876.
5. M. Takahashi and S. Sakai: Jpn. J. Appl. Phys. 44 (2005) L800.
6. K. Takahashi, K. Aizawa, B. E. Park, and H. Ishiwara: Jpn. J. Appl. Phys. 44 (2005) 6218.
7. T. A. Rost, H. Lin, and T. A. Rabson: Appl. Phys. Lett. 59 (1991) 3654.
8. T. Miyasako, M. Senoo, and E. Tokumitsu: Appl. Phys. Lett. 86 (2005) 162902.
9. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips: Appl. Phys. Lett. 88 (2006) 212903.
10. A. Dal Corso, M. Posternak, R. Testa, and A. Baldereschi: Phys. Rev. B 50 (1994) 10715.
11. J. Jerphagnon and H. Newkirk: Appl. Phys. Lett. 18 (1971) 245.
12. T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma: Appl. Phys. Lett. 72 (1998) 824.
13. F. Vigue, P. Vennegues, S. Vezian, M. Laugt, and J.-P. Faurie: Appl. Phys. Lett. 79 (2001) 194.
14. S. K. Hong, T. Hanada, Y. Chen, H.-J. Ko, T. Yao, D. Imai, K. Araki, and M. Shinohara: Appl. Surf. Sci. 190 (2002) 491.
15. E. F. Bertant, F. Forrast, and P. H. Fang: C. R. Acad. Sci. 256 (1963) 1958.
16. V. A. Bokov, G. A. Smolenski, S. A. Kizhaev, and I. E. Myl'nilova: Sov. Phys. Solid State 5 (1964) 2646.
17. G. A. Smolenski and V. A. Bokov: J. Appl. Phys. 35 (1964) 915.
18. I. G. Ismailzade and S. A. Kizhaev: Sov. Phys. Solid State 7 (1965) 236.
19. D. Ito, N. Fujimura, T. Yoshimura, and T. Ito: J. Appl. Phys. 93 (2003) 5563.
20. N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, A. Ashida, and N. Fujimura: Jpn. J. Appl. Phys. 43 (2004) 6613.
21. K. Maeda, T. Yoshimura, and N. Fujimura: IEEE Trans. Ultrason. Ferroelectr. Freq. Control 54 (2007) 2641.
22. T. Edahiro, N. Fujimura, and T. Ito: J. Appl, Phys. 93 (2003) 7673.
23. R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura: Trans. Mater. Res. Soc. Jpn. 30 (2005) 241.
24. K. Maeda, T. Yoshimura, and N. Fujimura: Mater. Res. Soc. Symp. Proc. 966 (2007) 0966-T03-01.
25. T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura: J. Appl. Phys. 103 (2008) 093717.
26. S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura, and N. Fujimura: Appl. Surf. Sci. 254 (2008) 6248.
27. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 486.