Quantum simulation of noise in silicon nanowire transistors with electron-phonon interactions

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Park, Hong Hyun ^a   Jin, Seonghoon ^b   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

^b SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; DRAIN CURRENT; ELECTRON DIFFRACTION; ELECTRON SCATTERING; ELECTRON-PHONON INTERACTIONS; GREEN'S FUNCTION; NANOWIRES; PHONON SCATTERING; QUANTUM CHEMISTRY; SCATTERING; SEMICONDUCTOR MATERIALS; TRANSISTORS;

BIAS CONDITIONS; BREAKING PROCESS; CONTINUOUS DISTRIBUTIONS; CURRENT NOISE; ELECTRON PHONONS; ELECTRON-PHONON SCATTERINGS; ELECTRONIC NOISE; NON EQUILIBRIUMS; PHASE-COHERENT TRANSPORTS; QUANTUM MECHANICALS; QUANTUM SIMULATIONS; SILICON NANOWIRE TRANSISTORS;

PHONONS;

EID: 59349085582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068346     Document Type: Article

References (32)

1. International Technology Roadmap for Semiconductors 2008 Update (Semiconductor Industry Association, 2008), URL http://public.itrs.net/.
2. G. B. Lesovik, JETP Lett. 49, 594 (1989). 0021-3640
3. B. Yurke and G. P. Kochanski, Phys. Rev. B 0163-1829 10.1103/PhysRevB.41. 8184 41, 8184 (1990).
4. M. Buttiker, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.65.2901 65, 2901 (1990).
5. G. Iannaccone, M. Macucci, and B. Pellegrini, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.4539 55, 4539 (1997).
6. J. -X. Zhu and A. V. Balatsky, Phys. Rev. B 0163-1829 10.1103/PhysRevB.67.165326 67, 165326 (2003).
7. M. Galperin, A. Nitzan, and M. A. Ratner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.075326 74, 075326 (2006).
8. V. Nam Do, P. Dollfus, and V. Lien Nguyen, Appl. Phys. Lett. 0003-6951 10.1063/1.2756127 91, 022104 (2007).
9. J. Wang, E. Polizzi, and M. Lundstrom, J. Appl. Phys. 0021-8979 10.1063/1.1769089 96, 2192 (2004).
10. S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 0021-8979 10.1063/1.2206885 99, 123719 (2006).
11. M. J. Gilbert, R. Akis, and D. K. Ferry, J. Phys.: Conf. Ser. 1742-6588 10.1088/1742-6596/35/1/020 35, 219 (2006).
12. K. Nehari, N. Cavassilas, and F. Michelini, Appl. Phys. Lett. 0003-6951 10.1063/1.2716351 90, 132112 (2007).
13. H. -H. Park, S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 0021-8979 10.1063/1.2956701 104, 023708 (2008).
14. L. V. Keldysh, Sov. Phys. JETP 20, 1018 (1965). 0038-5646
15. L. P. Kadanoff and G. Baym, Quantum Statistical Mechanics (Benjamin, New York, 1962).
16. S. Datta, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/2/40/004 2, 8023 (1990).
17. S. Datta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.45.1347 45, 1347 (1992).
18. M. Buttiker, Phys. Rev. B 0163-1829 10.1103/PhysRevB.46.12485 46, 12485 (1992).
19. S. Kogan, Electronic Noise and Fluctuations in Solids (Cambridge University Press, New York, 1996).
20. F. Bonani and G. Ghione, Noise in Semiconductor Devices, Modeling and Simulation (Springer-Verlag, Berlin, Heidelberg, 2001).
21. C. Jungemann, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007. 893210 54, 1185 (2007).
22. T. Gonzalez, O. M. Bulashenko, J. Mateos, D. Pardo, and L. Reggiani, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56.6424 56, 6424 (1997).
23. O. M. Bulashenko and J. M. Rubi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.045310 66, 045310 (2002).
24. Y. Naveh, A. N. Korotkov, and K. K. Likharev, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60.R2169 60, R2169 (1999).
25. J. D. Meindl, Q. Chen, and J. A. Davis, Science 0036-8075 10.1126/science.293.5537.2044 293, 2044 (2001).
26. F. Sacconi, M. P. Persson, M. Povolotskyi, L. Latessa, A. Pecchia, A. Gagliardi, A. Balint, T. Fraunheim, and A. Di Carlo, J. Comput. Electron. 1569-8025 10.1007/s10825-006-0138-y 6, 329 (2007).
27. E. Polizzi and N. B. Abdallah, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.245301 66, 245301 (2002).
28. R. Venugopal, Z. Ren, D. Jovanovic, S. Datta, and M. Lundstrom, J. Appl. Phys. 0021-8979 10.1063/1.1503165 92, 3730 (2002).
29. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.816524 50, 1914 (2003).
30. M. S. Obrecht, E. Abou-Allam, and T. Manku, IEEE Trans. Electron Devices 0018-9383 10.1109/16.987126 49, 524 (2002).
31. A. van der Ziel, Noise in Solid State Devices and Circuits (Wiley, New York, 1986).
32. H. C. de Graaf and F. M. Klaassen, Compact Transistor Modeling for Circuit Design (Springer-Verlag, Wien, 1990).