Electronic and transport properties of silicon nanowires

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 329-333

  Sacconi, F ^a   Persson, M P ^a   Povolotskyi, M ^a   Latessa, L ^a   Pecchia, A ^a   Gagliardi, A ^b   Balint, A ^b   Fraunheim, T ^b   Di Carlo, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Nano MOSFET; NEGF; Silicon nanowires; Tight binding

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GREEN'S FUNCTION; MOSFET DEVICES; QUANTUM CONFINEMENT; SILICON;

EMPIRICAL TIGHT-BINDING (ETB); LINEAR COMBINATION OF BULK BANDS (LCBB); NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF); SILICON NANOWIRES;

NANOWIRES;

EID: 34247326512     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0138-y     Document Type: Article

References (8)

1. Di Carlo, A.: Semicond. Sci. Technol. 18, R1-R31 (2003); Pecchia, A., Di Carlo, A.: Rept. Progr. Phys. 67, 1497-1561 (2004)
2. Sacconi, F., Di Carlo, A., Lugli, P., Städele, M., Jancu, J.M.: IEEE Trans. Elect. Dev. 51 (5), 741-748 (2004)
3. Grosso, G., Martinelli, L., Pastori, G.: Parravicini. Phys. Rev. B 51 13033 (1995)
4. Sacconi, F., Povolotskyi, M., Di Carlo, A., Lugli, P., Städele, M.: Solid-state electron 48, 575-580 (2004)
5. Zheng, Y., Rivas, C., Lake, R., Alam, K., Boykin, T.B., Klimeck, G.: IEEE Trans. Electron Dev. 52, 6 (2005)
6. Fridel, P., Hybertsen, M.S., Schlüter, M.: Phys. Rev. B 39, 7974 (1989)
7. Di Carlo, A. et al.: In: Introducing Molecular Electronics. Cuniberti, G., Fagas, G., Richter, K. (eds.). Spinger, Heidelberg (2005)
8. Zhang, R.Q., Lifshitz, Y., Ma, D.D.D., Zhao, Y.L., Frauenheim, Th., Lee, S.T., Tong, S.Y.: J. Chem. Phys. 123, 144703 (2005)