Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy

Physica B: Condensed Matter

Volumn 324, Issue 1-4, 2002, Pages 49-52

  Heissenstein, H ^a   Sadowski, H ^a   Helbig, R ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

FTIR; NTD; Optical transition; SiC:P

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NEUTRONS; SILICON CARBIDE;

OPTICAL TRANSITIONS;

PHOSPHORUS;

EID: 0036848339     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01268-1     Document Type: Article

References (9)

1. Schnöller M.S. IEEE Trans. Electron. Devices ED-21. 5:1974;313.
2. Greulich-Weber S. Phys. Stat. Sol. A. 162:1997;95.
3. Heissenstein H., Peppermüller C., Helbig R. J. Appl. Phys. 83:1998;7542.
4. Heissenstein H., Sadowski H., Peppermüller C., Helbig R. Mater. Sci. For. 338-342:2000;853.
5. Tamura S., Kimoto T., Matsunami H., Okada M., Karazawa S., Kimura I. Mater. Sci. For. 338-342:2000;849.
6. Sridhara S.G., Clemen I.L., Nizhner D.G., Devaty R.P., Choyke W.J., Larkin D.J. Mater. Sci. For. 264-268:1998;465.
7. Chen C.Q., Helbig R., Engelbrecht F., Zeman J. Appl. Phys. A. A72:2001;717.
8. Engelbrecht F., Helbig R. Mater. Res. Symp. Proc. 339:1994;529.
9. Nakashima S., Harima H. Phys. Stat. Sol. A. 162:1997;39.