Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 1994-2000

  Saito, Takeyasu ^a   Shimogaki, Yukihiro ^a   Egashira, Yasuyuki ^b   Sugawara, Katsuro ^c   Takahiro, Katsumi ^d   Nagata, Shinji ^d   Yamaguchi, Sadae ^d   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NIHON UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Reaction kinetics; Silicide; Tungsten

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; FLUORINE; PRESSURE EFFECTS; REACTION KINETICS; SILICON COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; DEPOSITION; TUNGSTEN;

ACTIVE REACTION INITIATORS; ATOMIC COMPOSITION RATIOS; FILM-FORMING REACTIONS; STEP COVERAGE PROFILES; FILM FORMATION; PRESSURE RATIO; REACTION INITIATORS; SILICIDE;

TUNGSTEN COMPOUNDS; THIN FILMS;

EID: 33745131448     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.03.004     Document Type: Article

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