Fully depleted SOI MOSFETs with WSix metal gate on HfO 2 gate dielectric

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 161-162

  Widiez, J ^b   Vinet, M ^a   Guillaumot, B ^b   Poiroux, T ^a   Lafond, D ^a   Holliger, P ^a   Weber, O ^a   Barral, V ^a   Previtali, B ^a   Martin, F ^a   Mouis, M ^c   Deleonibus, S ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HAFNIUM COMPOUNDS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS; WORK FUNCTION;

GATE DEVICES; GATE LENGTH; GATE WORK FUNCTION;

GATE DIELECTRICS;

EID: 43749087565     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284487     Document Type: Conference Paper

References (15)