Five-source PVD for the deposition of Cu(In1-xGa x)(Se1-ySy)2 absorber layers

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 33-36

  Gossla, Mario ^a,b   Shafarman, William N ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Cu(In,Ga)(Se,S)2; PVD; RBS; XRD

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; FABRICATION; FILM GROWTH; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOLAR CELLS; STRUCTURE (COMPOSITION); THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHALCOGEN; CU(IN,GA)(SE,S)2; DOUBLE LAYER DEPOSITION; OPEN CIRCUIT VOLTAGE;

COPPER ALLOYS;

EID: 18444401755     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.049     Document Type: Conference Paper

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