The change of the electronic properties of CIGS devices induced by the 'damp heat' treatment

Thin Solid Films

Volumn 403-404, Issue , 2002, Pages 320-324

  Igalson, M ^a   Wimbor, M ^a   Wennerberg, J ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Admittance spectroscopy; Cu(In,Ga)Se2; Damp heat; DLTS; Trap levels

Indexed keywords

ATMOSPHERIC HUMIDITY; CAPACITANCE; CHARGE CARRIERS; COPPER ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ELECTRON TUNNELING; HEAT TREATMENT; INTERFACES (MATERIALS); PHOTOVOLTAIC CELLS; THERMAL EFFECTS;

ADMITTANCE SPECTROSCOPY;

THIN FILM DEVICES;

EID: 0036467947     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01510-3     Document Type: Conference Paper

References (15)