Electron traps in Cu(In,Ga)Se2 absorbers of thin film solar cells studied by junction capacitance techniques

Opto-Electronics Review

Volumn 11, Issue 4, 2003, Pages 261-267

  Igalson, M ^a   Zabierowski, P ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Admittance speetroscopy; Defect levels; DLTS; Solar cells

Indexed keywords

CAPACITANCE; COPPER COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC ADMITTANCE; ELECTRON TRAPS; ELECTRON TUNNELING; FERMI LEVEL; IONIZATION; LAPLACE TRANSFORMS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS; THIN FILMS;

ADMITTANCE SPECTROSCOPY; DEFECT LEVELS; THERMAL VELOCITY;

SOLAR CELLS;

EID: 1642454855     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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