Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based monte carlo simulation tools

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 180-182

  Warren, Kevin M ^a   Sierawski, Brian D ^a   Weller, Robert A ^a   Reed, Robert A ^a   Mendenhall, Marcus H ^a   Pellish, Jonathan A ^a   Schrimpf, Ron D ^a   Massengill, Lloyd W ^a   Porter, Mark E ^b   Wilkinson, Jeffrey D ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b MEDTRONIC INC   (United States)

Author keywords

Environmental radiation effects; Integrated circuit radiation effects; Integrated circuit reliability; Neutron radiation effects

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; INTEGRATED CIRCUITS; MONTE CARLO METHODS; NEUTRON IRRADIATION; RADIATION EFFECTS;

INTEGRATED CIRCUIT RELIABILITY; NEUTRON RADIATION EFFECTS; THERMAL NEUTRON-INDUCED SOFT ERRORS;

STATIC RANDOM ACCESS STORAGE;

EID: 33847408307     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889632     Document Type: Article

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