Fabrication of high-aspect Si structures by deep reactive ion etching using hydrogen silsesquioxane masks replicated by room temperature nanoimprinting

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8619-8621

  Nakamatsu, Ken Ichiro ^a,b   Okada, Makoto ^a   Matsui, Shinji ^a  

^a UNIVERSITY OF HYOGO   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Annealing; Deep reactive ion etching; High aspect ratio Si pillar; Hydrogen silsesquioxane (HSQ); Nanoimprint; Room temperature

Indexed keywords

ANNEALING; ASPECT RATIO; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; ETCHING; HYDROGEN; IONS; PLASMA ETCHING; SILICON;

DEEP REACTIVE ION ETCHING; HIGH-ASPECT-RATIO SI PILLAR; HYDROGEN SILSESQUIOXANE (HSQ); NANOIMPRINT; ROOM TEMPERATURE;

REACTIVE ION ETCHING;

EID: 58749094981     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8619     Document Type: Article

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