Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 429-434

  Nasution, Indra ^a   Velasco, Angelito ^a   Kim, Hee joon ^a,b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Seoul National University of Science and Technology   (South Korea)

Author keywords

A1. Diffusivity; A1. Growth kinetics; A3. Chemical vapor deposition; B1. Aluminum oxide

Indexed keywords

ALUMINA; ALUMINUM; ARGON; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; BIOACTIVITY; CHLORINE; DIFFUSION; FILM GROWTH; GAS MIXTURES; GROWTH (MATERIALS); GROWTH KINETICS; INERT GASES; LIGHT METALS; OXIDES; OXYGEN; PHASE INTERFACES; VAPORS;

A1. DIFFUSIVITY; A1. GROWTH KINETICS; A3. CHEMICAL VAPOR DEPOSITION; ALUMINA FILMS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (AP-CVD); B1. ALUMINUM OXIDE; CHLORINE CONTENT; CRYSTALLINITY; FILM GROWTH RATES; GAS PHASE; GROWTH SPECIES; OXYGEN GASES;

CHEMICAL VAPOR DEPOSITION;

EID: 58549117462     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.061     Document Type: Article

References (29)

1. Wen S., and Chung D.D.L. Journal of Electronic Packaging 127 (2005) 235
2. Tsidulko A.G., Dokukina I.A., Rusinov V.M., Kulagin N.S., and Il'inskii I.I. Powder Metallurgy and Metal Ceramics 30 (1991) 374
3. Li J., Wang X., Wang L., Hao Y., Huang Y., Zhang Y., Sun X., and Liu X. Journal of Membrane Science 275 (2006) 6
4. Usov I., Arendt P., Stan L., DePaula R., Wang H., Foltyn S., and Dowden P. Journal of Materials Research 19 (2004) 1175
5. Pierson H.O. Handbook of Chemical Vapor Deposition (1992), Noyes Publications pp. 227-228
6. Choi S.W., Kim C., Kim J.G., and Chun J.S. Journal of Material Science 22 (1987) 1051
7. Tan P., Müller J., and Neüschutz D. Journal of the Electrochemical Society 152 (2005) C288
8. Catoire L., and Swihart M.T. Journal of the Electrochemical Society 149 (2002) C261
9. Blittersdorf S., Bahlawane N., Kohse-Höinghaus K., Atakan B., and Müller J. Chemical Vapor Deposition 9 (2003) 194
10. Kim H.J., Oh S.W., Noda H., Chang H.J., and Kim L.H. Key Engineering Materials 321-323 (2006) 1683
11. Hodgkinson J., Sheel D., Yates H., and Pemble M. Plasma Processes and Polymers 3 (2006) 597
12. Patscheider J., and Vepřek S. Plasma Chemistry and Plasma Processing 12 (1992) 129
13. Iler R.K. Journal of the American Ceramic Society 47 (1964) 339
14. Kuo J., and Bourell D.L. Journal of Material Science 32 (1997) 2687
15. Fredricksson E., and Carlsson J.O. Surface and Coatings Technology 56 (1993) 165
16. Im I.T., Oh H., Sugiyama M., Nakano Y., and Shimogaki Y. Journal of Crystal Growth 261 (2004) 214
17. Tena-Zaera R., Zuñiga-Pérez J., Martinez-Tomás C., and Muñoz-Sanjosé V. Journal of Crystal Growth 264 (2004) 237
18. Kim H.J., Egashira Y., and Komiyama H. Journal of Chemical Vapor Deposition 1 (1992) 20
19. Kim H.J., Egashira Y., and Komiyama H. Applied Physics Letters 59 (1991) 2521
20. Egashira Y., Kim H., and Komiyama H. Journal of the American Ceramic Society 77 (1994) 2009
21. Velasco A., Mitsuji H., Minami W., Lee J.I., Komiyama H., and Kim H.J. Journal of Crystal Growth 310 (2008) 3837
22. Komiyama H., Shimogaki Y., and Egashira Y. Chemical Engineering Science 54 (1999) 1941
23. Timoshkin A., and Schaefer III H. The Chemical Record 2 (2002) 319
24. Timoshkin A., Bettinger H., and Schaefer H. Journal of the American Chemical Society 119 (1997) 5668
25. R.B. Bird, W.E. Stewart, E.N. Lightfoot, Transport Phenomena, Wiley, New York, 1960, p. 508.
26. Wilke C.R. Chemical Engineering Progress 46 (1950) 95
27. Jhonston H.L., and Closky K.E.Mc. Journal of Physical Chemistry 44 (1940) 1038
28. Jhonston H.L., and Grilly E.R. Journal of Physical Chemistry 46 (1992) 948
29. Trautz M., and Nanth A. Ann. Phys. 5 (1930) 427