Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs

Electronics Letters

Volumn 35, Issue 17, 1999, Pages 1489-1491

  Gaquiere C ^a   Bollaert, S ^a   Zaknoune, M ^a   Cordier, Y ^a   Theron, D ^a   Crosnier, Y ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SUBSTRATES;

EPILAYERS; METAMORPHIC BUFFER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0345148446     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990988     Document Type: Article

References (9)

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