Effect of a buffer layer on the properties of UV photodetectors based on a ZnO/diamond film structure

Semiconductor Science and Technology

Volumn 23, Issue 12, 2008, Pages

  Huang, Jian ^a   Wang, Linjun ^a   Xu, Run ^a   Shi, Weimin ^a   Xia, Yiben ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CRYSTALLINE MATERIALS; DIAMONDS; ELECTRIC PROPERTIES; EPITAXIAL LAYERS; METALLIC FILMS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CRYSTALLINE QUALITIES; ELECTRICAL PROPERTIES; FILM STRUCTURES; FREESTANDING DIAMONDS; HETEROEPITAXIAL FILMS; HOMOBUFFER LAYERS; MAGNETRON SPUTTERING METHODS; PHOTOCURRENT CHARACTERISTICS; RESPONSIVITY; UV PHOTODETECTORS; ZNO FILMS;

DIAMOND FILMS;

EID: 58149457068     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/12/125018     Document Type: Article

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