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Volumn 43, Issue 4, 2007, Pages 502-507

New ferroelectric material for embedded FRAM LSIs

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); INFORMATION NETWORK INFRASTRUCTURES; TICKETLESS TRANSPORTATION SERVICES;

EID: 36049037258     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (43)

References (7)
  • 1
    • 36048979442 scopus 로고    scopus 로고
    • Proposal for new industry-university research collaborative partnership for enhancing industrial competitiveness, (in Japanese)
    • S. Yoshikawa: Proposal for new industry-university research collaborative partnership for enhancing industrial competitiveness, (in Japanese), OYO BUTURI, 75, 1, p.69-71 (2006).
    • (2006) OYO BUTURI , vol.75 , Issue.1 , pp. 69-71
    • Yoshikawa, S.1
  • 2
    • 84886448059 scopus 로고    scopus 로고
    • Advanced 0.5 μm FRAM device technology with full compatibility of halfmicron CMOS logic device
    • December
    • T. Yamazaki et al.: Advanced 0.5 μm FRAM device technology with full compatibility of halfmicron CMOS logic device. IEDM Tech. Dig., December 1997, p.613-616.
    • (1997) IEDM Tech. Dig , pp. 613-616
    • Yamazaki, T.1
  • 3
    • 0036923406 scopus 로고    scopus 로고
    • 4 M bit embedded FRAM for high performance system on chip (SoC) with large switching charge, reliable retention and high imprint resistance
    • December
    • Y. Horii et al.: 4 M bit embedded FRAM for high performance system on chip (SoC) with large switching charge, reliable retention and high imprint resistance. IEDM Tech. Dig., December 2002, p.539-542.
    • (2002) IEDM Tech. Dig , pp. 539-542
    • Horii, Y.1
  • 4
    • 0141426790 scopus 로고    scopus 로고
    • 0.18 μm SBT-Based Embedded FeRAM Operating at a Low Voltage of 1.1 V
    • Y. Nagano et al.: 0.18 μm SBT-Based Embedded FeRAM Operating at a Low Voltage of 1.1 V. Symp. VLSI Technol. 2003, p.171-172.
    • (2003) Symp. VLSI Technol , pp. 171-172
    • Nagano, Y.1
  • 5
    • 33745625140 scopus 로고    scopus 로고
    • Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition
    • S. K. Singh et al.: Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition. Appl. Phys. Lett., 88, 262908 (2006).
    • (2006) Appl. Phys. Lett , vol.88 , pp. 262908
    • Singh, S.K.1
  • 6
    • 0037436499 scopus 로고    scopus 로고
    • Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
    • J. Wang et al.: Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures. Science, 299, No.5613, p.1719-1722 (2003).
    • (2003) Science , vol.299 , Issue.5613 , pp. 1719-1722
    • Wang, J.1
  • 7
    • 4944237949 scopus 로고    scopus 로고
    • Structural and multiferroic properties of BiFeO3 thin films at room temperature
    • K. Y. Yun et al.: Structural and multiferroic properties of BiFeO3 thin films at room temperature. J. Appl. Phys, 96, p.3399-3403 (2004).
    • (2004) J. Appl. Phys , vol.96 , pp. 3399-3403
    • Yun, K.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.