Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5393-5397

  Park, Sang Jae ^a   Sadasivam, Karthikeyan Giri ^a   Chung, Tae Hoon ^a   Hong, Gi Cheol ^a   Kim, Jin Bong ^a   Kim, Sang Mook ^b   Park, Si Hyun ^c   Jeon, Seong Ran ^b   Lee, June Key ^a  

^a Chonnam National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Au nano clusters; Extraction efficiency; P GaN regrowth; Roughened surface

Indexed keywords

AU LAYERS; AU NANO-CLUSTERS; ETCHING MASKS; EXTRACTION EFFICIENCY; LIGHT EXTRACTIONS; P-GAN REGROWTH; ROUGHENED SURFACE; SELF ASSEMBLED; SURFACE ROUGHENING; TIME VALUES;

DRY ETCHING; ELECTROLUMINESCENCE; ETCHING; EXTRACTION; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GOLD; GOLD COMPOUNDS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; NANOCLUSTERS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NITRIDES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; PLASMA ETCHING; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS;

GALLIUM ALLOYS;

EID: 58149252818     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.1030     Document Type: Conference Paper

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