In situ photoemission study of interface and film formation during epitaxial growth of Er2O3 film on Si(001) substrate

Journal of Rare Earths

Volumn 26, Issue 6, 2008, Pages 775-777

  ZHU, Yanyan ^a   FANG, Zebo ^b   LIU, Yongsheng ^b   LIAO, Can ^b   CHEN, Sheng ^b  

^a SHANGHAI UNIVERSITY OF ELECTRIC POWER   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

high oxides; rare earths; surface and interface chemistry

Indexed keywords

BINDING ENERGY; CATALYTIC OXIDATION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; ERBIUM; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOELECTRICITY; PHOTOEMISSION; RARE EARTH ELEMENTS; RARE EARTHS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SYNCHROTRON RADIATION;

FILM FORMATIONS; FORMATION PROCESSES; IN-SITU; INTERFACIAL LAYERS; INTERFACIAL STRUCTURES; OXIDE LAYER THICKNESSES; SI(001); SI(001) SUBSTRATE; SURFACE AND INTERFACE CHEMISTRY; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPIES;

FILM GROWTH;

EID: 58149252149     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1002-0721(09)60003-X     Document Type: Article

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