Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer

Nanotechnology

Volumn 19, Issue 49, 2008, Pages

  Zacharatos, Filimon ^a   Gianneta, Violetta ^a   Nassiopoulou, Androula G ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM SHEET; AMMONIUM COMPOUNDS; ANISOTROPIC ETCHING; DRY ETCHING; ETCHING; HYDROFLUORIC ACID; NANOSTRUCTURES; PLASMA ETCHING; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TWO DIMENSIONAL; WET ETCHING;

ALUMINA FILMS; ALUMINA PORES; AMMONIUM HYDROXIDES; ANISOTROPIC WET ETCHINGS; ANODIZATION; COMBINED PROCESSES; CONFINED AREAS; ELECTROCHEMICAL FORMATIONS; ETCHING STEPS; FILM SURFACES; LATERAL SIZES; MASKING LAYERS; NANOPATTERNING TECHNIQUES; NANOPATTERNS; PATTERN TRANSFERS; POROUS ANODIC ALUMINAS; SI ETCHINGS; SI SUBSTRATES; SI TECHNOLOGIES; SILICON SURFACES; TETRA METHYLS;

ELECTROCHEMICAL ETCHING;

ALUMINUM OXIDE; ELECTROLYTE; HYDROFLUORIC ACID; NANOMATERIAL; NANOSPHERE; SELF ASSEMBLED MONOLAYER; SILICON; TETRAMETHYLAMMONIUM HYDROXIDE;

ANISOTROPY; ARTICLE; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; NANODEVICE; NANOFABRICATION; NANOTECHNOLOGY; PERIODICITY; POROSITY; PRIORITY JOURNAL; SURFACE PROPERTY; TIME;

EID: 58149236818     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/49/495306     Document Type: Article

References (24)

1. Bratton D, Yang D, Dai J and Ober C K 2006 Polym. Adv. Technol. 17 94
2. Sotomayor Torres C M 2003 Alternative Lithography: Unleashing the potentials of Nanotechnology (Series: Nanostructure Science and Technology) (Dordrecht: Kluwer-Academic/Plenum)
3. Gates B D, Xu Q, Stewart M, Ryan D, Willson C G and Whitsides G M 2005 Chem. Rev. 105 1171
4. Segalman R A 2005 Mater. Sci. Eng. R 48 191
5. Nagy N, Pap A E, Horvath E, Volk J and Barsony I 2006 Appl. Phys. Lett. 89 063104
6. O'Sullivan J P and Wood G C 1970 Proc. R. Soc. Lond. A 317 511
7. Thompson G E and Wood G C 1981 Nature 290 230
8. Masuda H, Yamada H, Satoh M, Asoh H, Nakao M and Tamamura T 1997 Appl. Phys. Lett. 71 2770
9. Asoh H, Nishio K, Nakao M, Yokoo A, Tamamura T and Masuda H 2001 J. Vac. Sci. Technol. B 19 569
10. Lazarouk S, Katsouba S, Demianovich A, Stanovski V, Voitech S, Vysotski V and Ponomar V 2000 Microelectron. Eng. 50 321
11. Kokonou M, Nassiopoulou A G and Travlos A 2003 Mater. Sci. Eng. B 101 65
12. Mei Y F, Wu X L, Shao X F, Huang G S and Siu G G 2003 Phys. Lett. A 309 109
13. Chu S Z, Wada K, Inoue S and Todoroki S 2002 J. Electrochem. Soc. B 149 321
14. Grouse D, Lo Y H, Miller A E and Crouse M 2000 Appl. Phys. Lett. 76 49
15. Kokonou M, Nassiopoulou A G and Giannakopoulos K P 2005 Nanotechnology 16 103
16. Park S K, Noh J S, Chin W B and Sung D D 2007 Curr. Appl. Phys. 7 180
17. Marquardt B, Eude L, Gowtham M, Cho G, Jeong H J, Chatelet M, Cojocaru C S, Kim B S and Pribat D 2008 Nanotechnology 19 405607
18. Asoh H, Matsuo M, Yoshihama M and Ono S 2003 Appl. Phys. Lett. 83 4408
19. Kokonou M, Nassiopoulou A G, Giannakopoulos K P, Travlos A, Stoica T and Kennou S 2006 Nanotechnology 17 2146
20. Sai H, Fujii H, Arafune K, Ohshita Y and Yamaguchi M 2006 Appl. Phys. Lett. 88 201116
21. Asoh H, Sasaki K and Ono S 2005 Electrochem. Commun. 7 953
22. Zacharatos F, Gianneta V and Nassiopoulou A G 2008 Phys. Status Solidi at press
23. Tabata O, Asahi R, Funabashi H, Shimaoka K and Sugiyama S 1992 Sensors Actuators A 34 51
24. Merlos A, Acero M, Bao M H and Esteve J 1993 Sensors Actuators A 37 737