SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 321-327

Porous alumina as low-ε insulator for multilevel metallization

(8) Lazarouk, S a Katsouba, S a Leshok, A a Demianovich, A b Stanovski, V b Voitech, S b Vysotski, V b Ponomar, V b

a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS (Belarus)

b Res and Des Co Belmicrosystems (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ALUMINA; ANODIC OXIDATION; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; METALLIZING; PERMITTIVITY; POROUS MATERIALS; THERMODYNAMIC STABILITY;

ELECTROCHEMICAL ANODIZING TECHNIQUES; MULTILEVEL METALLIZATION;

ELECTRIC INSULATING MATERIALS;

EID: 0033639971 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00298-1 Document Type: Article

Times cited : (31)

References (7)

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