Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation

7th Annual Non-Volatile Memory Technology Symposium, NVMTS

Volumn , Issue , 2006, Pages 94-99

  Courtade, L ^a   Turquat, Ch ^a   Muller, Ch ^a   Lisoni, J G ^b   Goux, L ^b   Wouters, D J ^b   Goguenheim, D ^c  

^a UNIVERSITÉ DE TOULON   (France)

^b IMEC   (Belgium)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Binary oxides; Film microstructure; Resistive switching memories; Switching phenomena

Indexed keywords

CONDUCTIVE FILMS; HAFNIUM OXIDES; METALLIC FILMS; MICROSTRUCTURE; NICKEL; NICKEL OXIDE; NONVOLATILE STORAGE; OXIDATION; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; REACTIVE SPUTTERING; SWITCHING; THRESHOLD VOLTAGE; TITANIUM DIOXIDE; TRANSITION METAL OXIDES; ZIRCONIA;

BINARY OXIDES; CONDUCTIVE SUBSTRATES; FILM MICROSTRUCTURES; POLYCRYSTALLINE OXIDE FILMS; RAPID THERMAL ANNEALING (RTA); RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORY; SWITCHING PHENOMENON;

OXIDE FILMS;

EID: 46849103863     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2006.378885     Document Type: Conference Paper

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