Synthesis of N-deficient GaN nanoparticles and its enhanced dielectric response

Applied Surface Science

Volumn 255, Issue 6, 2009, Pages 3843-3847

  Li, P G ^a   Lei, M ^a   Du, Y X ^b   Guo, X ^a   Tang, W H ^a  

^a ZHEJIANG SCI TECH UNIVERSITY   (China)

^b ZHENGZHOU INSTITUTE OF AERONAUTICAL INDUSTRY MANAGEMENT   (China)

Author keywords

Dielectric response; N deficient GaN; Nanoparticles; Raman scattering spectrum

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOPARTICLES; POLARIZATION; RAMAN SCATTERING; SOLID STATE REACTIONS;

DIELECTRIC RESPONSE; FREQUENCY SPECTRA; GAN NANOMATERIALS; LOW FREQUENCY RANGE; RAMAN SCATTERING SPECTRA; RELATIVE DIELECTRIC CONSTANT; ROTATION DIRECTIONS; SPACE CHARGE POLARIZATION;

SYNTHESIS (CHEMICAL);

EID: 57849160676     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.057     Document Type: Article

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