Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Li, J Z ^a   Bai, J ^a   Major, C ^a   Carroll, M ^a   Lochtefeld, A ^a   Shellenbarger, Z ^b  

^a AmberWave Systems Corporation   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COALESCENCE; DEFECTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

COALESCENCE DEFECT FORMATION; COALESCENCE-INDUCED THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 44649190498     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2924410     Document Type: Article

References (14)

1. R. N. Ghosh, B. Griffing, and J. M. Ballantyne, Appl. Phys. Lett. 0003-6951 10.1063/1.96555 48, 370 (1986).
2. E. A. Fitzgerald and N. Chand, J. Electron. Mater. 20, 8399 (1991).
3. T. Soga, S. Sakai, M. Umeno, and S. Hattori, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.26.252 26, 252 (1987).
4. T. Ya. Gorbach, R. Yu. Holiney, L. A. Matveeva, P. S. Smertenko, S. V. Svechnikov, E. F. Venger, R. Ciach, and M. Faryna, Thin Solid Films 336, 63 (1998).
5. T. Soga, T. Arokiaraj, H. Tahuchi, T. Timbo, and M. Umeno, J. Cryst. Growth 221, 220 (2000). 0022-0248
6. Z. I. Kazi, P. Thilakan, T. Egawa, M. Umeno, and T. Jimbo, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.40.4903 40, 4903 (2001).
7. A. Chediak, K. Scott, and P. Zhang, TICS4, MSE225, April 12, 2002.
8. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, Opt. Express 1094-4087 10.1364/OE.15.002315 15, 2315 (2007).
9. J. -S. Park, J. Bai, M. Curtin, B. Adekore, M. Carroll, and A. Lochtefeld, Appl. Phys. Lett. 0003-6951 10.1063/1.2435603 90, 052113 (2007).
10. J. Z. Li, J. Bai, J. -S. Park, B. Adekore, K. Fox, M. Carroll, A. Lochtefeld, and Z. Shellenbarger, Appl. Phys. Lett. 0003-6951 10.1063/1.2756165 91, 021114 (2007).
11. K. Kamon, S. Takagishi, and H. Mori, J. Cryst. Growth 0022-0248 10.1016/0022-0248(85)90332-X 73, 73 (1985).
12. Y. S. Chang, S. Naritsuka, and T. Nishinaga, J. Cryst. Growth 174, 630 (1997). 0022-0248
13. K. Fujita, Y. Shiba, and T. Yamamoto, Jpn. J. Appl. Phys., Part 2 29, L534 (1990). 0021-4922
14. H. Kobayashi and M. Kawabe, Jpn. J. Appl. Phys., Part 2 29, L1342 (1990). 0021-4922