Abrasive and surfactant effects on ceria slurry for chemical mechanical polishing in shallow trench isolation

Rare Metals

Volumn 21, Issue SUPPL., 2002, Pages 6-11

  Park, Jea Gun ^a   Katoh, Takeo ^a   Park, Jin Hyung ^a   Paik, Ungyu ^a   Kwack, Kae Dal ^a  

^a Hanyang University   (South Korea)

Author keywords

Abrasive; Ceria; CMP; ESA; Nitride; Oxide; Selectivity; Slurry; Zeta potential

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; PASSIVATION; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS;

CERIA SLURRY; CHEMICAL MECHANICAL POLISHING; ELECTROKINETIC SONIC AMPLITUDE TECHNIQUE; SHALLOW TRENCH ISOLATION;

CHEMICAL POLISHING;

EID: 0036659511     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Effects of silicon front surface topography on silicon oxide chemical mechanical planarization
2. Nanotopography effects on chemical mechanical polishing for shallow trench isolation
3. Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
4. Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing
5. The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing
6. 2-CMP
7. Tribology and fluid dynamics characterization of cerium oxide slurries
8. 2 particles
9. Tribology analysis of chemical-mechanical polishing
10. Selected process consumable technology requirements for advanced CMP process