Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junction

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5773-5777

  He, Gufeng ^a   Schneider, Oliver ^a   Qin, Dashan ^a   Zhou, Xiang ^a   Pfeiffer, Martin ^a   Leo, Karl ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; ENERGY EFFICIENCY; HOLE MOBILITY; OHMIC CONTACTS; OPTIMIZATION; PHOSPHORESCENCE; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR DEVICES; TRANSPORT PROPERTIES;

ELECTRON TRANSPORT LAYERS (ETL); ENERGY GAPS; HOLE INJECTION AND TRANSPORT LAYERS (HTL); ORGANIC LIGHT-EMITTING DEVICES (OLED); POWER EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 2942610999     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1702143     Document Type: Article

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