Room-temperature fabrication of anodic tantalum pentoxide for low-voltage electrowetting on dielectric (EWOD)

Journal of Microelectromechanical Systems

Volumn 17, Issue 6, 2008, Pages 1481-1488

  Li, Yifan ^a   Parkes, William ^a   Haworth, Les I ^a   Ross, Alan W S ^a   Stevenson, J Tom M ^a   Walton, Anthony J ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Amorphous FluoroPolymer (aFP); Anodic Ta2O5; CMOS; Electrowetting; Electrowetting on dielectric (EWOD); High dielectrics; Microfluidics

Indexed keywords

ALUMINA; BIOLOGICAL MATERIALS; CONTACT ANGLE; COPPER; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DROP FORMATION; DROPS; INTEGRATED CIRCUITS; PHOTORESISTS; POLYMERS; SURFACE ROUGHNESS; TANTALUM COMPOUNDS; TRANSITION METALS;

AMORPHOUS FLUOROPOLYMER (AFP); ANODIC TA2O5; CMOS; ELECTROWETTING; ELECTROWETTING ON DIELECTRIC (EWOD);

TANTALUM;

EID: 57449114314     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2008.2006827     Document Type: Article

References (28)

1. F. Mugele and J. C. Baret, "Electrowetting: From basics to applications," J. Phys. Condens. Matter, vol. 17, no. 28, pp. 705-774, Jul. 2005.
2. J. H. Lee, H. J. Moon, J. Fowler, T. Schoellhammer, and C. J. Kim, "Electrowetting and electrowetting-on-dielectric for microscale liquid handling," Sens. Actuators A, Phys., vol. 95, no. 2, pp. 259-268, Jan. 2002.
3. B. Berge and J. Peseux, "Variable focal lens controlled by an external voltage: An application of electrowetting," Eur. Phys. J., E., vol. 3, no. 2, pp. 159-163, Oct. 2000.
4. J. Heikenfeld and A. J. Steckl, "High-transmission electrowetting light valves," Appl. Phys. Lett., vol. 86, no. 15, p. 151-121, Apr. 2005.
5. Y. Li, A. Kazantzis, L. I. Haworth, K. Muir, A. W. S. Ross, J. G. Terry, J. T. M. Stevenson, A. M. Gundlach, A. S. Bunting, and A. J. Walton, "Building EWOD microfluidic array technology on top of foundry CMOS," in Proc. IET Semin. MEMS, Sensors Actuators, Apr. 2006, pp. 23-30.
6. 5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication," Solid State Electron., vol. 52, no. 9, pp. 1382-1387, Sep. 2008.
7. H.Moon, S. Cho, R. Garrrell, and C. J. Kim, "Low voltage electrowetting-on-dielectric," J. Appl. Phys., vol. 92, no. 7, pp. 4080-4087, Oct. 2002.
8. S. Berry, J. Kedzierski, and B. Abedian, "Low voltage electrowetting using thin fluoropolymer films," J. Colloid Interface Sci., vol. 303, pp. 517-524, 2006.
9. N. Y. Kim, S. M. Hong, S. S. Park, and Y. P. Hong, "The movement of micro droplet with the effects of dielectric layer and hydrophobic surface treatment with R.F. atmospheric plasma in EWOD structure," J. Phys.: Conf. Series, vol. 34, pp. 650-655, 2006.
10. G. Lippmann, "Relations entre les phénomènes électriques et capillaires," Ann. Chim. Phys., vol. 5, p. 494, 1875.
11. S. K. Cho, H. Moon, and C. J. Kim, "Creating, transporting, cutting, and merging liquid droplets by electrowetting-based actuation for digital microfluidic circuits," J. Microelectromech. Syst., vol. 12, no. 1, pp. 70-80, Feb. 2003.
12. 5 pyrochlore thin films," Thin Solid Films, vol. 419, no. 1/2, pp. 183-188, Nov. 2002.
13. J. Gong and C. J. Kim, "Direct-referencing two-dimensional-array digital microfluidics using multilayer printed circuit board," J. Microelectromech. Syst., vol. 17, no. 2, pp. 257-264, Apr. 2008.
14. L. Luan, R. D. Evans, N. M. Jokerst, and R. B. Fair, "Integrated optical sensor in a digital microfluidic platform," IEEE Sensors J. vol. 8, no. 5, pp. 628-635, May 2008.
15. L. Young, "Anodization constants for tantalum," J. Electrochem. Soc., vol. 124, no. 4, pp. 528-529, Apr. 1977.
16. 5) thin films for advanced dielectric applications," Mater. Sci. Eng. R, vol. 22, no. 6, pp. 269-322, 1998.
17. 5) thin films for ultra large scale integrated circuits (ULSIs) application - A review," J. Mater. Sci., Mater. Electron., vol. 10, pp. 9-31, 1999.
18. Y. Y. Lin, C. W. Lin, L. J. Yang, and A. B. Wang, "Micro-viscometer based on electrowetting on dielectric," Electrochim. Acta, vol. 52, no. 8, pp. 2876-2883, Feb. 2007.
19. U. Herberth, "Fluid manipulation by means of electrowetting-on-dielectrics," Ph.D. dissertation, Dept. Eng., Albert-Ludwigs Univ. Freiburg, Freiburg, Germany, May 2006.
20. S. C. Huang, H. M. Chen, S. C. Wu, and J. Y. Lee, "Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications," J. Appl. Phys., vol. 84, no. 9, pp. 5155-5157, Nov. 1998.
21. C. C. Cho, R. M. Wallace, and L. A. Files-Sesler, "Patterning and etching of amorphous Teflon films," J. Electron. Mater., vol. 23, no. 8, pp. 827-830, Aug. 1994.
22. J. G. Terry, C. J. Campbell, A. J. Ross, A. D. Livingston, A. H. Buck, P. Dickinson, C. P. Mountford, S. A. Evans, A. R. Mount, J. S. Beattie, J. Crain, P. Ghazal, and A. J. Walton, "Improved silicon nitride surfaces for next generation microarrays," Langmuir, vol. 22, no. 26, pp. 11 400-11 404, Dec. 2006.
23. H. J. J. Verheijen and M. W. J. Prins, "Reversible electrowetting and trapping of charge: Model and experiments," Langmuir, vol. 15, no. 20, pp. 6616-6620, 1999.
24. A. Quinn, R. Sedev, and J. Ralston, "Contact angle saturation in electrowetting," J. Phys. Chem. B, vol. 109, no. 13, pp. 6268-6275, Apr. 2005.
25. J. L. Lin, G. B. Lee, Y. H. Chang, and K. Y. Lien, "Model description of contact angles in electrowetting on dielectric layers," Langmuir vol. 22, no. 1, pp. 484-489, Jan. 2006.
26. K. H. Kang, "How electrostatic fields change contact angle in electrowetting," Langmuir, vol. 18, no. 26, pp. 10 318-10 322, 2002.
27. M. Vallet, M. Vallade, and B. Berge, "Limiting phenomena for the spreading of water on polymer films by electrowetting," Eur. Phys. J., vol. 11, no. 4, pt. B, pp. 583-591, Sep. 1999.
28. M. Leskela and M. Ritala, "Atomic layer deposition (ALD): From precursors to thin film structures," Thin Solid Films, vol. 409, no. 1, pp. 138-146, Apr. 2002.