Quantitative analysis of EUV resist outgassing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Kobayashi, Shinji ^a   Santillan, Julius Joseph ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

EUV intensity; Pressure rise method; Resist outgassing amount; Resist outgassing rate

Indexed keywords

ULTRAVIOLET DEVICES;

BEAM INTENSITIES; EUV INTENSITY; EUV RESISTS; EVALUATION TOOLS; EXPOSURE TOOLS; EXTREME ULTRAVIOLETS; MAIN FACTORS; OUTGASSING RATES; PRESSURE RISE METHOD; PRESSURE RISES; QUANTITATIVE ANALYSES; RESEARCH AND DEVELOPMENTS; RESIST OUTGASSING AMOUNT; RESIST OUTGASSING RATE; WAFER SURFACES;

DEGASSING;

EID: 57349198296     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771828     Document Type: Conference Paper

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