Analysis of outgassing from EUV resists

Journal of Photopolymer Science and Technology

Volumn 20, Issue 3, 2007, Pages 445-451

  Kobayashi, Shinji ^a   Toriumi, Minoru ^a   Santillan, Julius Joseph ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

EUV photoresist; GC MS method; Outgassing; Pressure rise method; QMS; Reaction rate

Indexed keywords

EID: 36148964107     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.20.445     Document Type: Article

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